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MRF157 - Silicon MOS N-Channel Microwave Power Transistor 600 W, up to 80 MHz, Enhancement Mode

MRF157 - Silicon MOS N-Channel Microwave Power Transistor 600 W, up to 80 MHz, Enhancement Mode

The silicon MOS transistor is designed for large-signal output stages to 80 MHz.

Features (at 30 MHz):

  • Power Gain: 15 dB Min
  • Output Power: 600 W
  • Efficiency: 40 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 125 VDC
Drain Current-Continuous ID 60 ADC
Gate–Source Voltage VGS ±40 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.13 °C/W
Total Power Dissipation PD 1350 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS = 100 mA, VGS = 0 V) V(BR)DSS 125 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 5 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) IDSS — — 20 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(TH) 1 3 5 VDC
Forward Transconductance (VDS = 10 V, ID = 20 A) GFS 16 24 — mhos
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CISS — 1800 — pF
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) COSS — 750 — pF
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) CRSS — 75 — pF
Power Gain (VDS = 50 V, POUT = 600 W, lDQ = 800 mA,  f = 30 MHz) Gp 15 20 — dB
Drain Efficiency (VDS = 50 V, POUT = 600 W, lDQ = 800 mA, f = 30 MHz) hD 40 45 — %