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MRF177 - Silicon MOS N-Channel RF Power Transistor 100 W, up to 500 MHz, Enhancement Mode

MRF177 - Silicon MOS N-Channel RF Power Transistor 100 W, up to 500 MHz, Enhancement Mode

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

Features:

  • Performance at 400 MHz, 28 Vdc
  • Power Gain: 10 dB Min
  • Output Power: 100 W
  • Efficiency: 55 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 8.0 ADC
Gate-Source Voltage VGS ±40 VDC
Storage Temperature Range TSTG -65 tu +150 ºC
Thermal Resistance, Junction to Case RqJC 0.65 ºC/W
Total Power Dissipation @TC=25 oC PD 270 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (ID=5.0 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) (1) IGSS — — 1.0 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) (1) IDSS — — 2.0 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) (1) VGS(TH) 1 — 6 VDC
Forward Transconductance (VDS = 10 V, ID = 2 A) (1) GFS 1.8 2.2 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) CISS — 100 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) COSS — 105 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) CRSS — 10 — pF
Power Gain (VDS = 28 V, POUT = 100W, lDQ. = 200 mA,  f = 400 MHz) Gp 10 12 — dB
Drain Efficiency (VDS = 28 V, POUT = 100 W, lDQ. = 200 mA,  f = 400 MHz) hD 55 60 — %