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MRF173 - Silicon MOS N-Channel Microwave Power Transistor 80 W, up to 200 MHz, Enhancement Mode

The silicon MOS transistor designed for broadband commercial application at frequencies up to 200 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Features (at 150 MHz):

Power Gain: 11 dB Min
Output Power: 80 W
Efficiency: 55 % Min

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Absolute Maximum Ratings

Parameters	Sym	Value	Unit
Drain-Source Voltage	VDSS	65	VDC
Drain Current-Continuous	ID	9	ADC
Gate-Source Voltage	VGS	±40	VDC
Operation Junction Temperature	Tj	-65 ÷ +200	ºС
Storage Temperature Range	TSTG	-65 ÷ +150	ºC
Thermal Resistance, Junction to Case	RqJC	0.8	°C/W
Total Power Dissipation	PD	220	W

Parameters

Parameter	Symbol	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage (IDS=50 mA, VGS=0 V)	V(BR)DSS	65	—	—	VDC
Gate-Source Leakage Current (VGS=40 V, VDS=0 V)	IGSS	—	—	1	mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V)	IDSS	—	—	2	mADC
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)	VGS(TH)	1	3	6	VDC
Forward Transconductance (VDS = 10 V, ID = 2 A)	GFS	1.8	2.2	—	mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz)	CISS	—	110	—	pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz)	COSS	—	105	—	pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz)	CRSS	—	10	—	pF
Power Gain (VDS = 28 V, POUT = 80 W, lDQ = 50 mA, f = 150 MHz)	Gp	11	13	—	dB
Drain Efficiency (VDS = 28 V, POUT = 80 W, lDQ = 50 mA, f = 150 MHz)	hD	55	60	—	%