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MRF151
MRF151 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 175 MHz, Enhancement Mode
![MRF151 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 175 MHz, Enhancement Mode MRF151 - Silicon MOS N-Channel RF Power Transistor 150 W, up to 175 MHz, Enhancement Mode](/uploads/images/products/mrf151.jpg)
The silicon MOS transistor is designed for professional transmitter applications in the HF frequency range.
Guaranteed Performance at 30 MHz, 50 V:
- Power Gain: 22 dB Typ
- Output Power: 150 W
- Efficiency: 40 % Typ
Guaranteed Performance at 175 MHz, 50 V:
- Power Gain: 13 dB Typ
- Output Power: 150 W
Absolute Maximum Ratings
Parameters | Sym | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDSS | 125 | VDC |
Drain Current-Continuous | ID | 16 | ADC |
Gate-Source Voltage | VGS | ±40 | VDC |
Storage Temperature Range | TSTG | -65 tu +150 | ºC |
Thermal Resistance, Junction to Case | RqJC | 0.6 | ºC/W |
Total Power Dissipation @TC=25 oC | PD | 300 | W |
Parameters
Parameter | Symbol | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
Drain-Source Breakdown Voltage (ID=100.0 mA, VGS=0 V) | V(BR)DSS | 125 | — | — | VDC |
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) | IGSS | — | — | 1.0 | mADC |
Zero Gate Voltage Drain Leakage Current (VDS = 50 V, VGS=0 V) | IDSS | — | — | 5.0 | mADC |
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) | VGS(TH) | 1.0 | — | 5.0 | VDC |
Forward Transconductance (VDS = 10 V, ID = 5.0 A) | GFS | 5.0 | 7.0 | — | mhos |
Input Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CISS | — | 350 | — | pF |
Output Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | COSS | — | 220 | — | pF |
Reverse Transfer Capacitance (VDS = 50 V, VGS=0 V, f = 1 MHz) | CRSS | — | 15 | — | pF |
Power Gain (f1 = 30 MHz, f2 = 30.001 MHz, VDD = 50 V, POUT =150 W (PEP), lDQ. = 250 mA) F=175 MHz |
Gp | 18 |
22 13 |
— | dB |
Drain Efficiency (f1 = 30 MHz, f2 = 30.001 MHz, VDD = 50 V, POUT = 150 W(PEP), lDQ. = 250 mA ) | hD | 45 | — | % | |
Intermodulation Distortion (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) |
IMD | – | -32 | – | dB |
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