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MRF137 - Silicon MOS N-Channel RF Power Transistor 30 W, up to 150 MHz, Enhancement Mode

MRF137 - Silicon MOS N-Channel RF Power Transistor 30 W, up to 150 MHz, Enhancement Mode

The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range.

Features:

  • Power Gain: 16 dB Min
  • Output Power: 30 W
  • Efficiency: 60 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 5 ADC
Gate-Source Voltage VGS ±40 VDC
Storage Temperature Range TSTG -65 tu +150 ºC
Thermal Resistance, Junction to Case RqJC 1.75 ºC/W
Total Power Dissipation @TC=25 oC PD 100 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (ID=10.0 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1.0 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 4.0 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(TH) 1 — 6 VDC
Forward Transconductance (VDS = 10 V, ID = 0.5 A) GFS 0.5 0.75 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS — 48 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS — 54 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS — 11 — pF
Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 25 mA,  f = 150 MHz) Gp 13 16 — dB
Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 25 mA,  f = 150 MHz) hD 50 60 — %