Русский English
Главная → Продукты → Экспортная продукция → Мощные СВЧ MOSFET транзисторы → СВЧ Транзисторы до 225 MHz VHF AM-FM → KP821A

KP821A - Silicon MOS N-Channel Microwave Power Transistor 5 W, up to 175 MHz, Enhancement Mode

KP821A - Silicon MOS N-Channel Microwave Power Transistor 5 W, up to 175 MHz, Enhancement Mode

The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range.

Features:

  • Power Gain: 19 dB Min
  • Output Power: 5 W
  • Efficiency: 50 % Min
Скачать техническое описание
Отправить запрос
Отправить запрос

Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 1.5 ADC
Gate-Source Voltage VGS ±20 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 7 ºC/W
Total Power Dissipation PD 25 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=10 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 2 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 50mA) VGS(TH) 2 — 5 VDC
Forward Transconductance (VDS = 10 V, ID = 0.3 A) GFS 0.16 0.26 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS — 16 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS — 14 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS — 1.8 — pF
Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA,  f = 175 MHz) Gp 19 20 — dB
Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA,  f = 175 MHz) hD 50 60 — %