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KP819AC - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 230 MHz, Enhancement Mode

KP819AC - Silicon MOS N-Channel Microwave Power Transistor 300 W, up to 230 MHz, Enhancement Mode

The silicon MOS transistor is designed for professional transmitter applications in the HF/VHF frequency range.

Features:

  • Performance at 230 MHz, 28 Vdc
  • Power Gain: 10 dB Min
  • Output Power: 300 W
  • Efficiency: 50 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 40 ADC
Gate-Source Voltage VGS ±20 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.4 ºC/W
Total Power Dissipation PD 438 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=50 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 20 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 100mA) VGS(TH) 2 — 5 VDC
Forward Transconductance (VDS = 10 V, ID = 5 A) (1) GFS 4 5 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) CISS — 530 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) COSS — 310 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) (1) CRSS — 35 — pF
Power Gain (VDS = 28 V, POUT = 300 W, lDQ. = 100 mA,  f = 230 MHz) Gp 10 11.5 — dB
Drain Efficiency (VDS = 28 V, POUT = 300 W, lDQ. = 100 mA,  f = 230 MHz) hD 50 60 — %