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BLF245 - Silicon MOS N-Channel Microwave Power Transistor 30 W, up to 175 MHz, Enhancement Mode

BLF245 - Silicon MOS N-Channel Microwave Power Transistor 30 W, up to 175 MHz, Enhancement Mode

The silicon MOS transistor designed for large signal amplifier applications in the VHF frequency range.

Features:

  • Power Gain: 13 dB Min
  • Output Power: 30 W
  • Efficiency: 50 % Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 65 VDC
Drain Current-Continuous ID 6 ADC
Gate-Source Voltage VGS ±20 VDC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance,
Junction to Case		 RqJC 2.6 ºC /W
Total Power Dissipation PD 68 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (IDS=10 mA, VGS=0 V) V(BR)DSS 65 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 2 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) VGS(TH) 2 — 4.5 VDC
Forward Transconductance (VDS = 10 V, ID = 1.5 A) GFS 1.2 1.9 — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS — 125 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS — 75 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS — 7 — pF
Power Gain (VDS = 28 V, POUT = 30 W, lDQ = 50 mA,  f = 175 MHz) Gp 13 15.5 — dB
Drain Efficiency (VDS = 28 V, POUT = 30 W, lDQ = 50 mA,  f = 175 MHz) hD 50 67 — %