Русский English
Главная → Продукты → Экспортная продукция → Мощные СВЧ LDMOS транзисторы → СВЧ LDMOS транзисторы → KP980A

KP980A - Silicon LDMOS Power Transistor 7 W, up to 1000 MHz, Enhancement Mode

KP980A - Silicon LDMOS Power Transistor 7 W, up to 1000 MHz, Enhancement Mode

The silicon LDMOS transistor die is designed for large- signal output and driver stages up to 860 MHz frequency range. This transistor is typically used for construction of terminal cascades of power amplifiers or transmitter applications.

Features:

  • Performance at 860 MHz, 28 Vdc
  • Power Gain: 11 dB Min
  • Output Power: 7 W
  • Efficiency: 40 % Min
Скачать техническое описание
Отправить запрос
Отправить запрос

Absolute Maximum Ratings

ParametersSymValueUnit
Drain-Source Voltage VDSS 60 VDC
Drain Current-Continuous ID 1.5 ADC
Gate-Source Voltage VGS ±20 VDC
Storage Temperature Range TSTG -65 tu +150 ºC
Thermal Resistance, Junction to
Case		 RqJC 10 ºC/W
Total Power Dissipation
@TC=25 oC		 PD 17.5 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Drain-Source Breakdown Voltage (ID=10 mA, VGS=0 V) V(BR)DSS 60 — — VDC
Gate-Source Leakage Current (VGS=20 V, VDS=0 V) IGSS — — 1.0 mADC
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS=0 V) IDSS — — 2.0 mADC
Gate Threshold Voltage (VDS = 10 V, ID = 20 mA) VGS(TH) 1 — 5 VDC
Forward Transconductance (VDS = 10 V, ID = 0.3 A) GFS 0.3 — — mhos
Input Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CISS — 22 — pF
Output Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) COSS — 11 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS=0 V, f = 1 MHz) CRSS — 2.2 — pF
Power Gain (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 500 MHz) Gp 11 14 — dB
Drain Efficiency (VDS = 28 V, POUT = 5 W, lDQ. = 50 mA, f = 500 MHz) hD 40 50 — %