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SD1480 - Silicon Bipolar NPN Microwave Power Transistor

SD1480 - Silicon Bipolar NPN Microwave Power Transistor

The silicon bipolar n-p-n transistor. Common Emitter from 136 to 175 MHz Applications.

Features:

  • Gold metallization with barrier realizes very stable characteristics and excellent lifetime
  • Diffused emitter ballast resistors
  • Internal Input Matching
  • Output power: 125 W
  • Power gain: 9,2 dB
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector-base Voltage VCBO 65 VDC
Emitter-Base Voltage VEBO 4.0 VDC
Collector Current IC 20 A
Operation Junction Temperature Tj +200 °С
Power Dissipation PDISS 270 W
Thermal Resistance, Junction to Case RθJC 0.65 °C/W
Storage Temperature Range TSTG +150 °C

Parameters

ParameterSymbolMinTypMaxUnit
Collector–Emitter Breakdown Voltage (IC = 40 mADC, VBE = 0) V(BR)CES 65 — — VDC
Collector–Emitter Breakdown Voltage (IC = 40 mADC, IBB      = 0 ) V(BR)CEO 35 — — VDC
Collector–Base Breakdown Voltage (IC = 40 mADC, IE = 0) V(BR)CBO 65 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mADC, IC = 0) V(BR)EBO 4.0 — — VDC
Collector– Emitter Cutoff Current (VCB = 30 VDC, IE = 0) ICES — — 15.0 mADC
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) COB — — 250 pF
Power Gain (VCE = 28 V, POUT = 125 W, f = 175 MHz) Gp 9.2 — — dB
Collector Efficiency (VCE = 28 V, POUT = 125 W, f = 175 MHz) η 55 — — %