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KT9188A - Silicon Bipolar NPN Microwave Power Transistor 10 W, in the 100 – 470 MHz Frequency Range

KT9188A - Silicon Bipolar NPN Microwave Power Transistor 10 W, in the 100 – 470 MHz Frequency Range

The silicon bipolar n-p-n transistor is designed for wideband large–signal output and driver amplifier stages in the 100 to 470 MHz frequency range.

Features (At 470 MHz):

  • Output Power: 10 W
  • Power Gain: 6 dB Min
  • Efficiency: 55% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector-Base Voltage VCBO 36 VDC
Emitter–Base Voltage VEBO 3 VDC
Collector Current IC 2.0 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 4 °C/W
Total Power Dissipation, TC=25 ºC PD 44 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE = 0 V) V(BR)CES 36 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 3 — — VDC
Collector– Base Leakage Current (VCB = 20 V, IE =0 A) ICBO — — 10 mADC
DC Current Gain (VCE = 10 V, IC = 0. A) hFE 20 — 100  
Output Capacitance (VCB = 7.5 V, IE = 0.1 A, f = 1 MHz) COB — — 34 pF
Power Gain (VCC = 7.5 V, f = 470 MHz, POUT = 10W) Gp 6 — — dB
Drain Efficiency (VCC = 7.5 V, f = 470 MHz, POUT = 10 W) h 55 — — %