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KT9175B
KT9175B - Silicon Bipolar NPN Microwave Power Transistor 2 W, in the 140 – 512 MHz Frequency Range
The silicon bipolar n-p-n transistor is designed for wideband large–signal output and driver amplifier stages in the 140 to 512 MHz frequency range.
Features (At 470 MHz):
- Output Power: 2 W
- Power Gain: 8 dB Min
- Efficiency: 55% Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 20 | VDC |
| Emitter–Base Voltage | VEBO | 3 | VDC |
| Collector Current | IC | 1.0 | ADC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RqJC | °C/W | |
| Total Power Dissipation, TC=25 ºC | PD | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE = 0 V) | V(BR)CES | 20 | — | — | VDC |
| Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) | V(BR)EBO | 3 | — | — | VDC |
| Collector– Base Leakage Current (VCB = 20 V, IE =0 A) | ICBO | — | — | 6 | mADC |
| DC Current Gain (VCE = 10 V, IC = 0.1 A) | hFE | 20 | — | 100 | |
| Output Capacitance (VCB = 7.5 V, IE = 0 A, f = 1 MHz) | COB | — | — | 24 | pF |
| Power Gain (VCC = 7.5 V, f = 470 MHz, POUT = 2 W) | Gp | 8 | — | — | dB |
| Drain Efficiency (VCC = 7.5 V, f = 470 MHz, POUT = 2 W) | h | 55 | — | — | % |
- Электронные компоненты
- Продукция для автомобильной и промышленной электроники
- Экспортная продукция
- Продукция компании Gallium Semiconductor