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KT9175A - Silicon Bipolar NPN Microwave Power Transistor 0.5 W, in the 140 - 512 MHz Frequency Range

KT9175A - Silicon Bipolar NPN Microwave Power Transistor 0.5 W, in the 140 - 512 MHz Frequency Range

The silicon bipolar n-p-n transistor is designed for wideband large–signal output and driver amplifier stages in the 140 to 512 MHz frequency range.

Features (At 470 MHz):

  • Output Power: 0.5 W
  • Power Gain: 10 dB Min
  • Efficiency: 55% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector-Base Voltage VCBO 20 VDC
Emitter–Base Voltage VEBO 3 VDC
Collector Current IC 0.5 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC   °C/W
Total Power Dissipation, TC=25 ºC PD   W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE = 0 V) V(BR)CES 20 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 3 — — VDC
Collector– Base Leakage Current (VCB = 20 V, IE =0 A) ICBO — — 2 mADC
DC Current Gain (VCE = 10 V, IC = 0.1 A) hFE 20 — 100  
Output Capacitance (VCB = 7.5 V, IE = 0 A, f = 1 MHz) COB — — 12 pF
Power Gain (VCC = 7.5 V, f = 470 MHz, POUT = 0.5 W) Gp 10 — — dB
Drain Efficiency (VCC = 7.5 V, f = 470 MHz, POUT = 0.5 W) h 55 — — %