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KT9155V - NPN RF Power Transistor

KT9155V - NPN RF Power Transistor

Designed for operation in Class AB linear push-pull power amplifiers of TV and radio transmitters.

Features:

  • Output power = 100 W, f = 860 MHz, VCC = 28 V
  • Power gain = 5 dB (min)
  • Efficiency = 45% (min)
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Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter Voltage VCER 50 V
Emitter-Base Voltage VEBO 3 V
Collector Current IC 24 A
Operating Junction Temperature Tj +200 oC
Storage Temperature Range Tstg -65 to +150 Case KT-82 oC
Thermal Resistance (junction to case) RθJC 0.75 oC/W
Total Power Dissipation, TC=25 ºC PD 233 W

Functional Tests

CharacteristicsSymbolValueUnit
mintypmax
Common-Emitter Amplifier Power Gain
(Vcc = 28 V, Pout = 100 W @ 1 dB Comp., f = 860 MHz)		 GP 5     dB
Collector Efficiency
(Vcc = 28 V, Pout = 100 W, f = 860 MHz)		 ηc 45     %