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KT9147A - Silicon Bipolar NPN Microwave Power Transistor 200 W, in the 30 – 500 MHz Frequency Range

KT9147A - Silicon Bipolar NPN Microwave Power Transistor 200 W, in the 30 – 500 MHz Frequency Range

The silicon bipolar n-p-n transistor is designed for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

Features (At 400 MHz):

  • Output Power: 160 W
  • Power Gain: 6 dB Min
  • Efficiency: 50% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector-Base Voltage VCBO 50 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 29 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 0.6 °C/W
Total Power Dissipation, TC=25 ºC PD 292 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE = 0 V) V(BR)CER 50 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector– Base Leakage Current (VCB = 30 V, IE =0 A) ICBO — — 20 mADC
DC Current Gain (VCE = 5 V, IC = 1 A) hFE 20 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — — 420 pF
Power Gain (VCC = 28 V, f = 400 MHz, POUT = 160 W) Gp 6 9 — dB
Drain Efficiency (VCC = 28 V, f = 400 MHz, POUT = 160 W) h 50 — — %