Русский English
Главная → Продукты → Экспортная продукция → Мощные биполярные СВЧ транзисторы → СВЧ транзисторы → KT9133A

KT9133A - NPN Silicon RF Power Transistor

KT9133A - NPN Silicon RF Power Transistor

Designed for operation in ultra - linear Class A low and medium-power amplifiers of TV transmitters (Band I – III).

Features:

  • Output power = 30 W (PEP), f = 225 MHz, VCC= 28 V
  • Power gain = 7.5 dB (min)
  • 3 Tone IMD = -53 dB (max)
Скачать техническое описание
Отправить запрос
Отправить запрос

Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter Voltage VCER 55 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 16 A
Operating Junction Temperature Tj +200 oC
Storage Temperature Range Tstg -65 to +150 oC
Thermal Resistance (junction to case) RθJC 1.0 Case KT-56 oC/W
Total Power Dissipation, TC=25 ºC PD 175 W

Functional Tests

CharacteristicsSymbolValueUnit
mintypmax
Common-Emitter Amplifier Power Gain
(Vcc = 28 V, Pout = 30 W PEP, f = 225 MHz)		 GP 7.5     dB
Intermodulation Distortion(2)
(Vcc = 28 V, Pout = 30 W PEP, f = 225 MHz)		 3 Tone
IMD		     -53 dB