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KT9116A - NPN Silicon RF Power Transistor

KT9116A - NPN Silicon RF Power Transistor

Designed for operation in ultra - linear Class A low and medium-power amplifiers of TV transmitters (Band I – III).

Features:

  • Output power = 5 W (PEP), f = 225 MHz, VCC= 28 V
  • Power gain = 14 dB (min)
  • 3 Tone IMD = -58 dB (max)
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Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter Voltage VCER 55 V
Emitter-Base Voltage VEBO 4 V
Collector Current IC 4 A
Operating Junction Temperature Tj +200 oC
Storage Temperature Range Tstg -65 to +150 oC
Thermal Resistance (junction to case) RθJC 2.5 Case KT-56 oC/W
Total Power Dissipation, TC=25 ºC PD 70 W

Functional Tests

CharacteristicsSymbolValueUnit
mintypmax
Common-Emitter Amplifier Power Gain
(Vcc = 28 V, Pout = 5 W PEP, f = 225 MHz)		 GP 14     dB
Intermodulation Distortion(2)
(Vcc = 28 V, Pout = 5 W PEP, f = 225 MHz)		 3 Tone
IMD		     -58 dB