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BLY93H - Silicon Bipolar NPN Microwave Power Transistor 25 W, up to 175 MHz

BLY93H - Silicon Bipolar NPN Microwave Power Transistor 25 W, up to 175 MHz

The silicon bipolar n-p-n transistor is designed for Class C, 28 V High Band Applications up to 175 MHz.

Features (At 175 MHz):

  • Output Power: 25 W
  • Power Gain: 9 dB Min.
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 65 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 3 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance,Junction to Case RqJC 2.5 °C/W
Total Power Dissipation, TC=25ºC PD 70 W

Parameters

ParameterSymbol Min. Typ. Max. Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE =0 V) V(BR)CEO 35 — — VDC
Collector–Emitter Breakdown Voltage (IC = 10 mA) V(BR)CER 65 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 30 V) ICBO — — 4 mADC
DC Current Gain (VCE = 5 V, IC = 1.25 A) hFE 10 — 100  
Output Capacitance (VCB = 28 V, IE = 0 A, f = 1 MHz) COB — 45 — pF
Power Gain (VCE = 28 V, IE = 200 mA, f = 175 MHz) Gp 9 — — dB