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BLY89C - Silicon Bipolar NPN Microwave Power Transistor 25 W, up to 175 MHz

BLY89C - Silicon Bipolar NPN Microwave Power Transistor 25 W, up to 175 MHz

The silicon bipolar n-p-n transistor is designed for Class C, 28 V High Band Applications up to 175 MHz.

Features (At 175 MHz):

  • Output Power: 25 W
  • Power Gain: 6 dB Min
  • Efficiency: 70% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 18 VDC
Collector-Base Voltage VCBO 36 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 6 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 2.4 °C/W
Total Power Dissipation, TC=25 ºC PD 73 W

Parameters

ParameterSymbol Min. Typ. Max. Unit
Collector–Emitter Breakdown Voltage (IC = 50 mA, VBE =0 V) V(BR)CEO 18 — — VDC
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 10 Ω) V(BR)CER 36 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 18 V) ICBO — — 10 mADC
DC Current Gain (VCE = 5 V, IC = 1.25 A) hFE 10 — 100  
Output Capacitance (VCB = 15 V, IE = 0, f = 1 MHz) COB — — 130 pF
Power Gain (VCE = 12.5 V, POUT = 25 W, f = 175 MHz) Gp 6 — — dB
Drain Efficiency  (VCE = 12.5 V, POUT = 25 W, f = 175 MHz) hC 70 — — %