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BLX96 - Silicon NPN Microwave Power Transistor 0.5 W, in the 470 - 860 MHz Range

BLX96 - Silicon NPN Microwave Power Transistor 0.5 W, in the 470 - 860 MHz Range

The silicon n-p-n transistor is designed for Class A Television Band IV- V Amplifier Applications Requiring High Linearity.

Features:

  • Power Gain: 6 dB Min at 860 MHz
  • Output Power: 0.5 W
  • IMD3: -60 dB Max at PREF = 0.5 W
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector-Emitter Voltage VCEO 24 VDC
Collector-Base Voltage VCBO 45 VDC
Collector Current IC 1 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 11 °C/W
Total Power Dissipation, TC = 25ºC PD 16 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 40 mA, VBE =0 V) V(BR)CEO 24 — — VDC
Collector–Base Breakdown Voltage (IC = 2 mA) V(BR)CBO 45     VDC
Emitter–Base Breakdown Voltage (IE = 0.5 mA, IC = 0 A) V(BR)EBO 3.5 — — VDC
DC Current Gain (VCE = 20 V, IC = 250 mA) hFE 20 — 100  
Output Capacitance (VCB = 20 V, IE = 0 A, f = 1 MHz) COB — — 10 pF
Power Gain (VCE = 25 V, IC = 250 mA, f = 860 MHz, POUT = 0.5 W,
Vision = -8 dB, Sound = -7 dB, Chroma = -16 dB)		 Gp 6 — — dB
Two-Tone Third-Order Intermodulation Distortion
(VCE = 25 V, IC = 250 mA, f = 860 MHz, POUT = 0.5 W, Vision = -8 dB, Sound = -7 dB, Chroma = -16 dB)		 IMD3 — — -60 dB