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2N6080 - Silicon Bipolar NPN Microwave Power Transistor 4 W, in the 130 - 230 MHz Range

2N6080 - Silicon Bipolar NPN Microwave Power Transistor 4 W, in the 130 - 230 MHz Range

The silicon bipolar n-p-n transistor is designed primarily for VHF mobile and marine transmitters.

Features (At 175 MHz):

  • Output Power: 4 W
  • Power Gain: 12 dB Min
  • Efficiency: 50% Min
  • Common Emitter
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 18 VDC
Collector-Base Voltage VCBO 36 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC(max) 1 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 15 °C/W
Total Power Dissipation, TC=25ºC PD 12 W

Parameters

ParameterSymbol Min. Typ. Max. Unit
Collector–Emitter Breakdown Voltage (IC = 100 mA, IB = 0 A) V(BR)CEO 18 — — VDC
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE =0 V) V(BR)CER 36 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 15 V, IE = 0 A) ICBO — — 0.25 mADC
DC Current Gain (VCE = 5 V, IC = 0.25 A) hFE 5 — 100  
Output Capacitance (VCB = 15 V, IC = 0 A, f = 1 MHz) COB — — 20 pF
Power Gain (VCB = 12.5 V, POUT = 4 W, f = 175 MHz) Gp 12 — — dB
Drain Efficiency  (VCB = 12.5 V, POUT = 4 W, f = 175 MHz) hC 50 — — %