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2N5642 - Silicon Bipolar NPN Microwave Power Transistor 20 W, up to 175 MHz

2N5642 - Silicon Bipolar NPN Microwave Power Transistor 20 W, up to 175 MHz

The silicon bipolar n-p-n transistor is designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz.

Features (At 175 MHz):

  • Output Power: 20 W
  • Power Gain: 8.2 dB Min
  • Efficiency: 60% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 65 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 3 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 5.8 °C/W
Total Power Dissipation, TC=25ºC PD 30 W

Parameters

ParameterSymbol Min. Typ. Max. Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) V(BR)CEO 35 — — VDC
Collector–Emitter Breakdown Voltage (IC = 200 mA) V(BR)CER 65 — — VDC
Emitter–Base Breakdown Voltage (IE = 10 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector–Base Leakage Current (VCB = 30 V, IE = 0 A) ICBO — — 1 mADC
DC Current Gain (VCE = 5 V, IC = 200 mA) hFE 5 — 100  
Output Capacitance (VCB = 30 V, IE = 0 A, f = 1 MHz) COB — — 35 pF
Power Gain (VCE = 28 V, POUT = 20 W, f = 175 MHz) Gp 8.2 10 — dB
Drain Efficiency  (VCE = 28 V, POUT = 20 W, f = 175 MHz) hC 60 — — %