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2N5636 - Silicon Bipolar NPN Microwave Power Transistor 7.5 W, up to 400 MHz

2N5636 - Silicon Bipolar NPN Microwave Power Transistor 7.5 W, up to 400 MHz

The silicon bipolar n-p-n transistor is designed for UHF communications transmitters.

Features (At 400 MHz):

  • Output Power: 7.5 W
  • Power Gain: 7.9 dB Min
  • Efficiency: 50% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 60 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 1.5 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 11.7 °C/W
Total Power Dissipation, TC=25ºC PD 15 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB =0 A) V(BR)CEO 35 — — VDC
Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE = 0 V) V(BR)CER 60 — — VDC
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector– Base Leakage Current (VCB = 30 V, IE =0 A) ICBO — — 0.1 mADC
DC Current Gain (VCE = 5 V, IC = 200 mA) hFE 5 — 100  
Output Capacitance (VCB = 30 V, IC = 0 A, f = 1 MHz) COB — — 20 pF
Power Gain (VCE = 28 V, f = 400 MHz, POUT = 7.5 W) Gp — 7.9 — dB
Drain Efficiency (VCE = 28 V, f = 400 MHz, POUT = 7.5 W) h 50 — — %