Русский English
Главная → Продукты → Экспортная продукция → Мощные биполярные СВЧ транзисторы → СВЧ транзисторы → 2N5635

2N5635 - Silicon Bipolar NPN Microwave Power Transistor 2.5 W, up to 400 MHz

2N5635 - Silicon Bipolar NPN Microwave Power Transistor 2.5 W, up to 400 MHz

The silicon bipolar n-p-n transistor is designed for UHF communications transmitters.

Features (At 400 MHz):

  • Output Power: 2.5 W
  • Power Gain: 8.5 dB Typ
  • Efficiency: 50% Min
Скачать техническое описание
Отправить запрос
Отправить запрос

Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 60 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC 1 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 23.3 °C/W
Total Power Dissipation, TC=25ºC PD 7.5 W

 

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 100 mA, IB =0 A) V(BR)CEO 35 — — VDC
Collector–Emitter Breakdown Voltage (IC = 100 mA, VBE = 0 V) V(BR)CER 60 — — VDC
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector– Base Leakage Current (VCB = 30 V, IE =0 A) ICBO — — 0.10 mADC
DC Current Gain (VCE = 5 V, IC = 100 mA) hFE 5 — 100  
Output Capacitance (VCB = 30 V, IC = 0 A, f = 1 MHz) COB — — 10 pF
Power Gain (VCE = 28 V, f = 400 MHz, POUT = 2.5 W) Gp — 8.5 — dB
Drain Efficiency (VCE = 28 V, f = 400 MHz, POUT = 2.5 W) h 50 — — %