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2N5590
2N5590 - Silicon Bipolar NPN Microwave Power Transistor 10 W, in the 130 - 175 MHz Range
The silicon bipolar n-p-n transistor designed primarily for VHF mobile and marine transmitters.
Features (At 175 MHz):
- Output Power: 10 W
- Power Gain: 5.2 dB Min
- Efficiency: 50% Min
Absolute Maximum Ratings
| Parameters | Sym | Value | Unit |
|---|---|---|---|
| Collector–Emitter Voltage | VCEO | 18 | VDC |
| Collector-Base Voltage | VCBO | 36 | VDC |
| Emitter–Base Voltage | VEBO | 4 | VDC |
| Collector Current | IC | 2 | ADC |
| Operation Junction Temperature | Tj | -65 ÷ +200 | ºС |
| Storage Temperature Range | TSTG | -65 ÷ +150 | ºC |
| Thermal Resistance, Junction to Case | RθJC | 5.8 | °C/W |
| Total Power Dissipation, TC=25ºC | PD | 30 | W |
Parameters
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) | V(BR)CEO | 18 | — | — | VDC |
| Collector–Emitter Breakdown Voltage (IC = 200 mA, VBE =0 V) | V(BR)CER | 36 | — | — | VDC |
| Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) | V(BR)EBO | 4 | — | — | VDC |
| Collector–Base Leakage Current (VCB = 15 V, IE = 0 A) | ICBO | — | — | 1 | mADC |
| DC Current Gain (VCE = 5 V, IC = 0.25 A) | hFE | 5 | — | 100 | |
| Output Capacitance (VCB = 15 V, IC = 0 A, f = 1 MHz) | COB | — | — | 70 | pF |
| Power Gain (VCB = 13.6 V, POUT = 10 W, f = 175 MHz) | Gp | 5.2 | — | — | dB |
| Drain Efficiency (VCB = 13.6 V, POUT = 10 W, f = 175 MHz) | hC | 50 | — | — | % |
- Электронные компоненты
- Продукция для автомобильной и промышленной электроники
- Экспортная продукция
- Продукция компании Gallium Semiconductor