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2N5177 - Silicon Bipolar NPN Microwave Power Transistor 17 W, in the 100 – 500 MHz Frequency Rang

2N5177 - Silicon Bipolar NPN Microwave Power Transistor 17 W, in the 100 – 500 MHz Frequency Rang

The silicon bipolar n-p-n transistor is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment.

Features (At 500 MHz):

  • Output Power: 17 W
  • Power Gain: 3 dB Min
  • Efficiency: 45% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 35 VDC
Collector-Base Voltage VCBO 55 VDC
Emitter–Base Voltage VEBO 3.5 VDC
Collector Current IC 2 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 5 °C/W
Total Power Dissipation, TC=25ºC PD 40 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB = 0 A) V(BR)CEO 35 — — VDC
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE =0 V) V(BR)CER 55 — — VDC
Emitter–Base Breakdown Voltage (IE = 2.5 mA, IC = 0 A) V(BR)EBO 3.5 — — VDC
Collector–Base Leakage Current (VCB = 15 V, IE = 0 A) ICBO — — 1 mADC
DC Current Gain (VCE = 5 V, IC = 0.25 A) hFE 10 — 100  
Output Capacitance (VCB = 15 V, IC = 0 A, f = 1 MHz) COB — — 20 pF
Power Gain (VCE = 28 V, POUT = 17 W, f = 500 MHz) Gp 3 — — dB
Drain Efficiency  (VCE = 28 V, POUT = 17 W, f = 500 MHz) hC 45 — — %