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2N3375 - Silicon Bipolar NPN Microwave Power Transistor 3 W, in the 130 - 400 MHz Frequency Range

2N3375 - Silicon Bipolar NPN Microwave Power Transistor 3 W, in the 130 - 400 MHz Frequency Range

The silicon bipolar n-p-n transistor is designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region.

Features (At 400 MHz):

  • Output Power: 3 W
  • Power Gain: 4.8 dB Min
  • Efficiency: 40% Min
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Absolute Maximum Ratings

ParametersSymValueUnit
Collector–Emitter Voltage VCEO 40 VDC
Collector-Base Voltage VCBO 65 VDC
Emitter–Base Voltage VEBO 4 VDC
Collector Current IC(max) 1.5 ADC
Operation Junction Temperature Tj -65 ÷ +200 ºС
Storage Temperature Range TSTG -65 ÷ +150 ºC
Thermal Resistance, Junction to Case RqJC 15 °C/W
Total Power Dissipation, TC=25ºC PD 11.6 W

Parameters

ParameterSymbolMin.Typ.Max.Unit
Collector–Emitter Breakdown Voltage (IC = 200 mA, IB =0 A) V(BR)CEO 40 — — VDC
Collector-Base Breakdown Voltage (IC = 0.5 mA, VBE =0 V) V(BR)CBO 65     VDC
Emitter–Base Breakdown Voltage (IE = 0.25 mA, IC = 0 A) V(BR)EBO 4 — — VDC
Collector– Base Leakage Current (VCB = 30 V, IE =0 A) ICBO — — 0.1 mADC
DC Current Gain (VCE = 5 V, IC = 250 mA) hFE 10 — 100  
Output Capacitance (VCB = 30 V, IE = 0 A, f = 1 MHz) COB — — 10 pF
Power Gain (VCE = 28 V, POUT = 3 W, f = 400 MHz) Gp 4.8 — — dB
Drain Efficiency (VCE = 28 V, POUT = 3 W, f = 400 MHz) h 40 — — %